Open AccessEnhancement of On-Resistance Characteristics Using Charge Balance Analysis Modulation in a Trench Filling Super Junction MOSFET
Author(s) -
Jongmin Geum,
Eun Sik Jung,
Yong Tae Kim,
Ey Goo Kang,
Man Young Sung
Publication year - 2014
Publication title -
journal of electrical engineering and technology/journal of electrical engineering and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.226
H-Index - 27
eISSN - 2093-7423
pISSN - 1975-0102
DOI - 10.5370/jeet.2014.9.3.843
Subject(s) - trench , materials science , breakdown voltage , voltage , doping , charge (physics) , mosfet , equivalent series resistance , optoelectronics , pillar , electrical engineering , electronic engineering , engineering , structural engineering , physics , nanotechnology , layer (electronics) , transistor , quantum mechanics
In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.