Open AccessA Study on Characteristic Improvement of IGBT with P-floating Layer
Author(s) -
Sinsu Kyoung,
Eun Sik Jung,
Ey Goo Kang
Publication year - 2014
Publication title -
journal of electrical engineering and technology/journal of electrical engineering and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.226
H-Index - 27
eISSN - 2093-7423
pISSN - 1975-0102
DOI - 10.5370/jeet.2014.9.2.686
Subject(s) - insulated gate bipolar transistor , breakdown voltage , power semiconductor device , materials science , safe operating area , doping , electrical engineering , semiconductor device , optoelectronics , voltage , semiconductor , power (physics) , transistor , layer (electronics) , engineering , composite material , physics , quantum mechanics