Open AccessA Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-k Dielectrics
Author(s) -
P. Vimala,
N. B. Balamurugan
Publication year - 2014
Publication title -
journal of electrical engineering and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.226
H-Index - 27
eISSN - 2093-7423
pISSN - 1975-0102
DOI - 10.5370/jeet.2014.9.2.649
Subject(s) - dielectric , capacitance , quantum tunnelling , transistor , mosfet , high κ dielectric , gate dielectric , charge density , threshold voltage , voltage , optoelectronics , computational physics , quantum , materials science , physics , quantum mechanics , electrode
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom