Open AccessA Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement
Author(s) -
Hanyung Jung,
Junghoon Lee
Publication year - 2014
Publication title -
senseo haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2093-7563
pISSN - 1225-5475
DOI - 10.5369/jsst.2014.23.2.114
Subject(s) - materials science , threshold voltage , optoelectronics , voltage , field effect transistor , transistor , pressure sensor , field effect , electrical engineering , physics , thermodynamics , engineering