Open AccessSensitive Characteristics of Hot Carriers by Bias Stress in Hydrogenated n-chnnel Poly-silicon TFT
Author(s) -
J. H. Lee,
YongJae Lee
Publication year - 2003
Publication title -
journal of sensor science and technology
Language(s) - English
Resource type - Journals
eISSN - 2093-7563
pISSN - 1225-5475
DOI - 10.5369/jsst.2003.12.5.218
Subject(s) - thin film transistor , materials science , transconductance , threshold voltage , dangling bond , optoelectronics , gate oxide , oxide , silicon , transistor , electrical engineering , voltage , layer (electronics) , nanotechnology , metallurgy , engineering
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