Open AccessSensitive Characteristics of Hot Carriers by Bias Stress in Hydrogenated n-chnnel Poly-silicon TFT
Publication year - 2003
Publication title -
senseo haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2093-7563
pISSN - 1225-5475
DOI - 10.5369/jsst.2003.12.5.218
Subject(s) - thin film transistor , materials science , transconductance , threshold voltage , dangling bond , optoelectronics , gate oxide , oxide , silicon , transistor , electrical engineering , voltage , layer (electronics) , nanotechnology , metallurgy , engineering