
Characteristics of a PMOSFET Photodetector for Highly-Sensitive Active Pixel Sensor
Publication year - 2003
Publication title -
senseo haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2093-7563
pISSN - 1225-5475
DOI - 10.5369/jsst.2003.12.4.149
Subject(s) - photodetector , cmos , optoelectronics , mosfet , materials science , image sensor , dot pitch , cmos sensor , pixel , electrical engineering , transistor , physics , optics , engineering , voltage