Open AccessElectrophysical properties of ITO:Ga2O3 films grown by rf magnetron sputtering
Author(s) -
Victor Suman,
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Vadim Morari,
E. Rusu,
Lidia Ghimpu,
V. V. Ursaki,
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Publication year - 2022
Publication title -
moldavian journal of the physical sciences
Language(s) - English
Resource type - Journals
eISSN - 2537-6365
pISSN - 1810-648X
DOI - 10.53081/mjps.2021.20-2.05
Subject(s) - materials science , sputter deposition , cavity magnetron , argon , sapphire , substrate (aquarium) , thin film , evaporation , sputtering , optoelectronics , high power impulse magnetron sputtering , analytical chemistry (journal) , vacuum evaporation , optics , nanotechnology , chemistry , laser , thermodynamics , physics , oceanography , organic chemistry , chromatography , geology
n this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied