Open AccessReview A Review of Recent Progress in Efficiency-Power Correlations of Silicon Hetero-Junction Solar Cells
Author(s) -
Tahir Iqbal,
Amna Azam,
Aqsa Tehseen,
Almas Bashir
Publication year - 2019
Publication title -
pakistan journal of scientific and industrial research. series a: physical sciences
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 4
eISSN - 2223-2559
pISSN - 2221-6413
DOI - 10.52763/pjsir.phys.sci.62.3.2019.202.214
Subject(s) - czts , materials science , optoelectronics , band gap , solar cell , cadmium telluride photovoltaics , doping , copper indium gallium selenide solar cells , solar cell efficiency , semiconductor , chalcopyrite , engineering physics , silicon , copper , metallurgy , physics
Solar technology is widely used to generate the electricity. It is fundamental p-n junction that supplies the emf whenever sunlight falls on it. A lot of efforts have been incremented by inserting the impurity level in the semiconductor band gap to enhance the efficiency of the solar cells. Copper zinc tin sulphide (Cu2ZnSnS4) devices are the highly stable and efficient part for the most fundamental of many solar cells. Cadmium (Cd) doping is carried out to enhance the efficiency of CZTS. Cadmium sulphide (CdS) consists of band gap that is 2.4 eV. Ternary organic solar cells attract the researchers interest level due to the best absorbing capacity that is much easier to handle but the exclusive difficulty in dealing with its morphology. Thin film solar cells have greater coefficient of absorption because of its high functioning and have band gap value in the range between 1.5 and 1.0 eV. Solar cells consists of chalcopyrite on a polyimide film that demonstrates the largest cell efficiency approximately 18.7%.