Open AccessSpecific Features of the Interaction of R-23 (CHF3) High-Frequency Discharge Freon with Gallium Arsenide and Silicon
Author(s) -
A. V. Dunaev
Publication year - 2022
Publication title -
elektronnaya obrabotka materialov
Language(s) - English
Resource type - Journals
eISSN - 2345-1718
pISSN - 0013-5739
DOI - 10.52577/eom.2022.58.2.61
Subject(s) - freon , gallium arsenide , etching (microfabrication) , silicon , optoelectronics , materials science , semiconductor , plasma , halogen , plasma etching , gallium , analytical chemistry (journal) , nanotechnology , chemistry , physics , metallurgy , environmental chemistry , organic chemistry , alkyl , layer (electronics) , quantum mechanics
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