Open AccessSpecific Features of the Interaction of R-23 (CHF3) High-Frequency Discharge Freon with Gallium Arsenide and Silicon
Author(s) -
A. V. Dunaev
Publication year - 2022
Publication title -
èlektronnaâ obrabotka materialov
Language(s) - English
Resource type - Journals
eISSN - 2345-1718
pISSN - 0013-5739
DOI - 10.52577/eom.2022.58.2.61
Subject(s) - freon , gallium arsenide , etching (microfabrication) , silicon , semiconductor , materials science , plasma , optoelectronics , halogen , gallium , plasma etching , analytical chemistry (journal) , chemistry , nanotechnology , physics , metallurgy , chromatography , organic chemistry , alkyl , layer (electronics) , quantum mechanics