Open AccessImpact of Device Parameter Variation on the Electrical Characteristic of N-type Junctionless Nanowire Transistor with High-k Dielectrics
Author(s) -
Mohammed Adamu Sule,
Mathangi Ramakrishnan,
Nurul Ezaila Alias,
Norlina Paraman,
Zaharah Johari,
Afiq Hamzah,
Michael Loong Peng Tan,
Usman Ullah Sheikh
Publication year - 2020
Publication title -
indonesian journal of electrical engineering and informatics (ijeei)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.168
H-Index - 8
ISSN - 2089-3272
DOI - 10.52549/ijeei.v8i2.1277
Subject(s) - materials science , nanowire , subthreshold slope , transistor , optoelectronics , doping , mosfet , field effect transistor , dielectric , threshold voltage , silicon , semiconductor , electron mobility , electrical engineering , voltage , engineering
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