Open AccessAnalytical current Model for Dual Material Double Gate Junctionless Transistor
Author(s) -
Santosh Chandrakant Wagaj,
Shailaja Patil
Publication year - 2019
Publication title -
indonesian journal of electrical engineering and informatics (ijeei)
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.168
H-Index - 8
ISSN - 2089-3272
DOI - 10.52549/ijeei.v7i3.581
Subject(s) - materials science , current (fluid) , mosfet , transistor , gate oxide , channel (broadcasting) , optoelectronics , dual (grammatical number) , doping , double gate , current density , electronic engineering , electrical engineering , engineering , physics , voltage , art , literature , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom