z-logo
open-access-imgOpen Access
Electrophysical Properties of Monocrystalline n-Si+0.4at%Ge:P Alloy irradiated by 60Co Gamma Photons
Author(s) -
Ia Kurashvili,
Tornike Kimeridze,
Giorgi Chubinidze,
Nargiza Gogolashvili,
Giorgi Darsavelidze
Publication year - 2022
Publication title -
georgian scientists
Language(s) - Uncategorized
Resource type - Journals
ISSN - 2667-9760
DOI - 10.52340/gs.2022.04.04.09
Subject(s) - annealing (glass) , alloy , materials science , irradiation , monocrystalline silicon , atmospheric temperature range , photon , electric current , dissociation (chemistry) , germanium , electrical resistivity and conductivity , radiation , silicon , analytical chemistry (journal) , condensed matter physics , metallurgy , chemistry , thermodynamics , optics , nuclear physics , physics , chromatography , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom