Open AccessINVESTIGATION OF DEFECT INP(001) SURFACE BY THE METHOD OF LOW ENERGY ION SCATTERING
Author(s) -
M. K. Karimov,
У.О. Кутлиев,
Mexroj Otaboev
Publication year - 2019
Publication title -
uzbek journal of physics
Language(s) - English
Resource type - Journals
ISSN - 2181-077X
DOI - 10.52304/.v21i6.142
Subject(s) - ion , scattering , surface (topology) , low energy ion scattering , atomic physics , binary number , low energy , materials science , energy (signal processing) , collision , molecular physics , chemistry , optics , physics , geometry , computer science , mathematics , arithmetic , organic chemistry , computer security , quantum mechanics
Investigation of grazing scattering of 3 keV Ar+ and Xe+ ions from the defect surface InP(001) are reported. Computer simulations based on the binary collision approximation permit one to carry out a quantitative analysis of data. It is determined that energy distributions of reflected ions directly depend on the defect structure of the topmost surface layer, and these defects form some peaks in low energy part of energy distribution.