Open AccessTHE COLLIDING PARTICLES MASS RATIO INFLUENCE ON PECULIARITIES OF LOW-ENERGY ION NEAR-SURFACE IMPLANTATION AT CHANNELING CONDITIONS
Author(s) -
F. F. Umarov,
A. M. Rasulov,
A.A. Dzhurakhalov
Publication year - 2018
Publication title -
uzbek journal of physics
Language(s) - English
Resource type - Journals
ISSN - 2181-077X
DOI - 10.52304/.v20i4.102
Subject(s) - ion , channelling , atomic physics , range (aeronautics) , ion implantation , materials science , collision cascade , mass ratio , chemistry , physics , thin film , sputtering , organic chemistry , astrophysics , composite material , nanotechnology
In the present work the peculiarities of ion implantation and colliding particles mass ratio influence on the ranges, energy loss and profiles of distribution for 1−5 keV P+ ions channelling in Si(110) and SiC(110) at normal incidence, and 1 keV Be+ and Se+ ions in GaAs(100), as well as 5 keV Ar+ and Kr+ on Cu(001) surface at glancing incidence are carried out by computer simulation in binary collision approximation. It is shown that for paraxial part of a beam the main contribution to the total energy loss comes from inelastic ones. It has been established that the energy loss of ions transmitted through thin crystal and depth profile distributions depend on width of the channel and mass ratio of colliding atoms. It was shown that at grazing surface channeling conditions the main peak of the implanted depth distributions is considerably shallow, the range for Se+ ions is shallower and the half-width of profile for these ions is narrow than that for Be+ ions. The results allow one to select the optimum for implanted depth distributions with demanded shape at narrow near-surface area of crystals obtaining.