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Characterization of a Single Layer of Si0.73Ge0.27 and a Quantum-Well Structure of Si0.4Ge0.6/Ge by Quantitative SIMS Depth Profiling Using the Analytical Depth Resolution Function of the MRI Model
Author(s) -
Qiufang Deng,
Hee-Dong Kang,
Yi Han,
X. H. Zhang,
X. W.,
Qikai Huang,
J. Y. Wang
Publication year - 2018
Language(s) - English
Resource type - Conference proceedings
DOI - 10.5220/0007440504860492
Subject(s) - characterization (materials science) , profiling (computer programming) , materials science , optoelectronics , nanotechnology , computer science , operating system

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