Open AccessSTUDY OF THE MAGNETO-RESISTANCE SILICON P-TYPE
Author(s) -
L.U. Taimuratova
Publication year - 2021
Publication title -
ķorķyt ata atyndaġy ķyzylorda universitetìnìņ habaršysy/ķorķyt ata atyndaġy ķyzylorda universitetiniņ habaršysy
Language(s) - English
Resource type - Journals
eISSN - 2958-8367
pISSN - 1607-2782
DOI - 10.52081/bkaku.2021.v57.i2.041
Subject(s) - silicon , magnetoresistance , magnetic field , materials science , condensed matter physics , detector , magnetic amplifier , optoelectronics , physics , amplifier , optics , operational amplifier , cmos , quantum mechanics
The study of galvanomagnetic phenomena in silicon, in strong magnetic fields, is associated with great difficulties due to the high resistance of the samples and the complexity of preparing omics contacts that work well in a wide range of temperatures and magnetic fields. Therefore, until now, all existing data on galvanomagnetic effects in silicon have been obtained only in the region of weak magnetic fields. Given the growing interest in silicon due to its large potential, it seemed appropriate to study the galvanomagnetic effects in the region of strong magnetic fields, where quantum effects play the dominant role. The study of Galvano-magnetic effects (as well as tensoeffects) in silicon under extreme conditions allows not only to identify the mechanisms of these effects, but also to identify the possibility of creating gaussmeters, infrared detectors, sensitive strain gauges, amplifiers and generators of a wide frequency range. Keywords: galvano-magnetic effects, silicon, negative magnetoresistance, uniaxial pressure.