B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible
Author(s) -
JuanJesús VelascoVélez,
A. Chaiyboun,
Theodor Doll,
Ch. Wilbertz,
Juergen Woellenstein,
MarieLuise Bauersfeld
Publication year - 2009
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.5162/sensor09/v2/b7.3
Subject(s) - materials science , annealing (glass) , optoelectronics , cmos , electric field , transistor , silicon , band bending , oxide , field effect transistor , electrical resistance and conductance , desorption , nanotechnology , adsorption , electrical engineering , composite material , voltage , chemistry , engineering , physics , organic chemistry , quantum mechanics , metallurgy
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