z-logo
open-access-imgOpen Access
B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible
Author(s) -
JuanJesús VelascoVélez,
A. Chaiyboun,
Theodor Doll,
Ch. Wilbertz,
Juergen Woellenstein,
MarieLuise Bauersfeld
Publication year - 2009
Language(s) - Uncategorized
Resource type - Conference proceedings
DOI - 10.5162/sensor09/v2/b7.3
Subject(s) - materials science , annealing (glass) , optoelectronics , cmos , electric field , transistor , silicon , band bending , oxide , field effect transistor , electrical resistance and conductance , desorption , nanotechnology , adsorption , electrical engineering , composite material , voltage , chemistry , engineering , physics , organic chemistry , quantum mechanics , metallurgy

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom