Open AccessNBTI Fast Electrical Characterization in pMOSFET Devices
Author(s) -
DhiaElhak Messaoud,
Boualem Djezzar,
Abdelmadjid Benabdelmoumene,
Mohamed Boubaaya,
Boumediene Zatout,
Abdelkader Zitouni
Publication year - 2021
Publication title -
algerian journal of signals and systems
Language(s) - English
Resource type - Journals
eISSN - 2676-1548
pISSN - 2543-3792
DOI - 10.51485/ajss.v6i1.3
Subject(s) - transconductance , negative bias temperature instability , measure (data warehouse) , materials science , mosfet , exponent , stress (linguistics) , optoelectronics , electrical engineering , analytical chemistry (journal) , voltage , chemistry , computer science , transistor , engineering , linguistics , philosophy , database , chromatography
To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained.