Impact of NBTI Stress on VDMOSFET Regions | Zendy

Sidi Mohammed Merah | Zendy; B. Nadji | Zendy

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Impact of NBTI Stress on VDMOSFET Regions

Author(s) -

Sidi Mohammed Merah,

B. Nadji

Publication year - 2018

Publication title -

algerian journal of signals and systems

Language(s) - English

Resource type - Journals

eISSN - 2676-1548

pISSN - 2543-3792

DOI - 10.51485/ajss.v3i2.60

Subject(s) - negative bias temperature instability , materials science , degradation (telecommunications) , stress (linguistics) , channel (broadcasting) , capacitance , transistor , threshold voltage , optoelectronics , voltage , electrical engineering , engineering , chemistry , linguistics , philosophy , electrode

In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.

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