Open AccessImpact of NBTI Stress on VDMOSFET Regions
Author(s) -
Merah Sidi Mohammed Merah Sidi Mohammed,
Nadji Bouchra Nadji Bouchra
Publication year - 2018
Publication title -
algerian journal of signals and systems
Language(s) - English
Resource type - Journals
eISSN - 2676-1548
pISSN - 2543-3792
DOI - 10.51485/ajss.v3i2.60
Subject(s) - negative bias temperature instability , materials science , degradation (telecommunications) , stress (linguistics) , channel (broadcasting) , capacitance , transistor , threshold voltage , optoelectronics , voltage , electrical engineering , engineering , chemistry , linguistics , philosophy , electrode
In this paper, we investigate the impact of negative bias temperature instability (NBTI) degradation on both channel and drain regions, of commercial power double diffused MOS transistor (VDMOSFET), using capacitance-voltage method (C-V). We report that the degradation is important at channel (drain) region in p-channel VDMOSFET (n-channel VDMOSFET). That means that the phosphorus doped region (n-type) is more sensitive to NBTI stress.