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BIST Architecture for Magnetic Memories
Author(s) -
Armen Babayan
Publication year - 2020
Publication title -
mathematical problems of computer science
Language(s) - English
Resource type - Journals
eISSN - 2738-2788
pISSN - 2579-2784
DOI - 10.51408/1963-0062
Subject(s) - magnetoresistive random access memory , computer science , embedded system , non volatile random access memory , semiconductor memory , random access , memory refresh , random access memory , computer memory , computer architecture , computer hardware , parallel computing , operating system
Magnetic random-access memory (MRAM) is one of the emerging memory technologies, which can be considered as the next universal memory because of its good parameters. Nevertheless, this type of memory is not guaranteed from defects and it is very important to understand the fault typology and develop a test solution that addresses these faults. In this paper a Built-in Self-Test (BIST) solution is presented, which is specifically tailored for MRAMs and efficiently deals with MRAM specific faults.

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