Open AccessMesa-structures and Focal Plane Arrays based on epitaxially grown InSb layers
Author(s) -
K. O. Boltar,
A. A. Lopuhin,
P. V. Vlasov,
N. I. Iakovleva
Publication year - 2021
Publication title -
uspehi prikladnoj fiziki
Language(s) - English
Resource type - Journals
ISSN - 2307-4469
DOI - 10.51368/2307-4469-2021-9-6-513-522
Subject(s) - indium antimonide , molecular beam epitaxy , epitaxy , optoelectronics , materials science , optics , indium , physics , nanotechnology , layer (electronics)
Aspects of epitaxially grown indium antimonide (InSb) on InSb substrates (InSb-on-InSb) by molecular beam epitaxy (MBE) for the 2D focal plane arrays fabrication process have been described. The epitaxial growth offers possibility for complex structure production, and then such structures suppose more effective control of the thermal generation charge carriers as the detector temperature is raised above 80 K. Investigations of mid-wave infrared (MWIR) 320256 FPAs with 30 μm pitch and 640512 FPAs with 15 μm pitch based on
InSb-on-InSb layers have shown high performance: the average detectivity at T = 77 K more than 21011 cmW-1Hz1/2, the average value of noise equivalent temperature difference
(NETD) with a cold aperture of 60o at T = 77K was in the range of 10–20 mK. High quality thermal imaging images were obtained in real time mode.