Open AccessInfluence of penetrating radiations on electrical low frequency noise of semiconductors
Author(s) -
B. I. Yakubovich
Publication year - 2021
Publication title -
uspehi prikladnoj fiziki
Language(s) - English
Resource type - Journals
ISSN - 2307-4469
DOI - 10.51368/2307-4469-2021-9-3-181-186
Subject(s) - noise (video) , semiconductor , infrasound , materials science , radiation , optoelectronics , optics , acoustics , physics , computer science , artificial intelligence , image (mathematics)
The influence of penetrating radiations on the electrical low-frequency noise of semiconductors is studied. Expression is calculated that determines the number of structural defects in semiconductors arising from exposure to penetrating radia-tion. General form expression is calculated for the spectrum of electrical low-frequency noise in semiconductors when exposed to penetrating radiation. Quanti-tative relationship was established between the spectrum of electrical low-frequency noise and the development of disturbances in the structure of semicon-ductors caused by penetrating radiations. The results obtained can be used to de-termine the spectra of electrical noise in semiconductors of various types and in numerous semiconductor devices. The results of the article have practical applica-tions. Calculated expressions allow to make estimates of the intensity of electrical low-frequency noise, from which conclusions can be drawn about possibility of functioning and reliability of semiconductor devices. Established relationship be-tween electrical noise and radiation defects can be used to estimate, based on spec-tral characteristics of the noise, the defectiveness of structure of semiconductors subjected to radiation damage.