Open AccessTemperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0 x 0.04)
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.205
H-Index - 7
ISSN - 1996-0948
DOI - 10.51368/1996-0948/2021-1-63-68
Subject(s) - ohmic contact , materials science , diode , atmospheric temperature range , space charge , solid solution , current (fluid) , silicon , relaxation (psychology) , analytical chemistry (journal) , condensed matter physics , thermodynamics , chemistry , optoelectronics , nanotechnology , metallurgy , physics , psychology , social psychology , layer (electronics) , quantum mechanics , chromatography , electron
The current-voltage characteristics of p-Si–n-Si1-xSnx (0 x 0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0 x 0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.