Open AccessUltra-weak emission and microcurrents instabilities in blue GaN LEDs at different stages of degradation
Author(s) -
S. G. Ekhanin,
Alexander Tomashevich
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
ISSN - 1996-0948
DOI - 10.51368/1996-0948-2021-6-74-82
Subject(s) - luminescence , light emitting diode , materials science , optoelectronics , indium , degradation (telecommunications) , planar , quantum well , optics , physics , electronic engineering , laser , computer graphics (images) , computer science , engineering
It is found that the ultra-weak luminescence observed in microcurrents mode in blue GaN LEDs with multiple quantum wells is due to tunnel-recombination processes with the participation of defect states and local potential wells of various depths, which arise as a result of
planar fluctuations of indium in the InGaN layers of the active region. Digital photographs were obtained and patterns of ultra-weak luminescence of the surface of LED crystals were analyzed. It is shown that the patterns of luminescence, along with the current-voltage characteristic, demonstrate significant changes after testing even at the initial stages of degradation, which indicates a high sensitivity of these parameters to degradation processes and the possibility of their use in diagnostic and non-destructive testing methods.