Open AccessPhotodetector devices based on PIN and barrier structures
of the mid-wave IR range of the spectrum
Author(s) -
K. O. Boltar,
N. I. Iakovleva,
Alekcey Lopukhi,
P. V. Vlasov
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
ISSN - 1996-0948
DOI - 10.51368/1996-0948-2021-6-30-40
Subject(s) - optoelectronics , photodetector , photodiode , ternary operation , materials science , infrared , layer (electronics) , narrowband , dark current , antimonide , chemistry , optics , nanotechnology , physics , computer science , programming language
Multilayer structures based on the antimonide group materials with absorber layers InSb or AlxIn1-XSb, and XBn-structures with AlxIn1-XSb barrier layer (InSb/AlxIn1-XSb/InSb), designed for the manufacture of advanced photosensitive devices detecting radiation in the medium-wave infrared (IR) range (MWIR), have been developed and investigated. Various topology photosensitive elements (PSE) with absorbing layers InSb or AlxIn1-XSb were fabricated on the basis of MBE-grown p–i–n and barrier structures. It is shown that wideband ternary al-loys AlxIn1-XSb are considered as an alternative to the narrowband binary compound InSb, since, due to wide-band material properties, photodiodes based on AlxIn1-XSb have lower dark currents, and, consequently, noise. The average values of detectivity D* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so D* was more than 1011 cmW-1Hz1/2 in p–i–n-structures, and D* exceed of 1012 cmW-1Hz1/2 in barrier structures.