Open AccessInvestigation of reactively sputtered TaN thin-film resistors
for microwave photonic applications
Author(s) -
E. A. Erofeev,
Egor Polyntsev,
Sergei Ishutkin
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
ISSN - 1996-0948
DOI - 10.51368/1996-0948-2021-5-93-98
Subject(s) - resistor , materials science , tantalum nitride , thin film , sputtering , optoelectronics , sputter deposition , tantalum , thermal stability , microwave , nitride , electronic engineering , composite material , electrical engineering , layer (electronics) , nanotechnology , metallurgy , voltage , computer science , engineering , telecommunications , chemical engineering
Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator