Open AccessEtching of ZnO films by a focused flow electrons with medium energies (up to 70 keV)
Author(s) -
А. М. Исмаилов,
А. Э. Муслимов
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
ISSN - 1996-0948
DOI - 10.51368/1996-0948-2021-5-75-80
Subject(s) - etching (microfabrication) , desorption , electron , thermal desorption , materials science , auger electron spectroscopy , auger , cathode ray , atomic physics , auger effect , electron bombardment , analytical chemistry (journal) , chemistry , nanotechnology , adsorption , nuclear physics , physics , layer (electronics) , chromatography
Consideration is given to the results of the study of etching processes ( 200 nm/min) of a ZnO film by a focused electron beam with medium energy (70 keV) under vacuum conditions of
910-5 Pa. It was shown that the construction of a model of the ZnO film etching during electron bombardment, taking into account the likely thermal desorption and electron-stimulated desorption, is not confirmed by calculations. A possible etching mechanism based on the radiolysis caused by Auger decay in near-surface layers of ZnO films is proposed.