Open AccessFine structure of spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with FPA diode
Author(s) -
V. A. Stuchinsky,
A. V. Vishnyakov
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
ISSN - 1996-0948
DOI - 10.51368/1996-0948-2021-3-47-53
Subject(s) - photodiode , diode , optics , materials science , optoelectronics , monte carlo method , charge carrier , physics , statistics , mathematics
The three-dimensional Monte Carlo simulation of charge-carrier diffusion in a mercury-cadmium-tellurium based focal plane array (FPA) was used to calculate the spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with a selected FPA diode in the limit of largest and lowest diode photocurrents. The simulation was performed for a standard 2D n-on-p FPA with square photodiodes. Fine features in measured spot-scan profiles due to the presence of FPA structure were identified, and the de-pendence of these features on the boundary conditions for diffusing charge carriers at the n-type diode regions was demonstrated. An explanation to the shape of the profiles, fully con-sistent with the computational procedure of the problem, is given.