Open AccessInfluence of a Cu2O hole-transport layer on perovskite solar cellscharacteristics
Publication year - 2021
Publication title -
prikladnaâ fizika
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.205
H-Index - 7
ISSN - 1996-0948
DOI - 10.51368/1996-0948-2021-2-45-51
Subject(s) - perovskite (structure) , layer (electronics) , perovskite solar cell , solar cell , photoelectric effect , materials science , optoelectronics , engineering physics , nanotechnology , chemistry , crystallography , physics
The article is devoted to the creation of a model of a perovskite solar cell with the FTO/TiO2/CH3NH3PbI3-xClx/Cu2O/Au structure in the SCAPS-1D numerical simulation pro-gram. The effect of the thickness of the CH3NH3PbI3-xClxperovskite layer, as well as the thick-ness, concentration of acceptors, and hole mobility in the Cu2O layer on the photoelectric characteristicsof solar cells has been studied. It was found that the optimal thickness of the perovskite layer is 600–700 nm. An increase in the thickness of the Cu2O layer from 50 nm to 500 nm does not have a significant effect on the efficiency of the solar cell, while the optimal concentration of acceptors in the Cu2O layer is 1018–1019cm-3, and the holemobility should be more than 0.1 cm2/Vs. It is shown that a perovskite solar cell with a hole conductive layer Cu2O has better characteristics compared to the Spiro-OMeTAD layer and has the highest effi-ciency of 21.55%