Open AccessGrowth of ZnO nanorods array on PCB for enhanced UV photosensors
Author(s) -
Ashish Yengantiwar,
Arun Banpurkar
Publication year - 2021
Publication title -
journal of mountain research/journal of mountain research
Language(s) - English
Resource type - Journals
eISSN - 2582-5011
pISSN - 0974-3030
DOI - 10.51220/jmr.v16i2.4
Subject(s) - nanorod , photocurrent , materials science , optoelectronics , wurtzite crystal structure , ultraviolet , photoconductivity , electrode , printed circuit board , scanning electron microscope , photodetector , wavelength , deposition (geology) , biasing , dark current , nanotechnology , voltage , zinc , chemistry , physics , composite material , paleontology , quantum mechanics , sediment , computer science , metallurgy , biology , operating system
Ultraviolet (UV) photosensitive device is fabricated using ZnO nanorods array on commercially available printed circuit board (PCB). Facile open aqueous solution deposition (OASD) method is used to deposit ZnO nanorods array in a trenched region between closely spaced Cu-electrodes. X-ray diffraction (XRD) patterns confirm the wurtzite phase of ZnO nanorods arrays and scanning electron microscopy (SEM) characterizes the multidimensional growth of ZnO nanorods across the trenched part of PCB. The current-voltage (I-V) characteristics of the device in dark is analogous to the back-to-back diode behaviour. However, the device exhibits an excellent photoresponsivity wherein the photocurrent value increases by two orders of magnitude at 2 V bias under the illumination ultraviolet (UV wavelength ~ 254 nm) light source. The enhancement in photocurrent is mainly due to formation of multiple contacts between neighbouring grain-boundaries of the nanorods arrays extending to the Cu-electrodes. The prototype optoelectronic device displays almost four-times increment in the UV photocurrent at 5 V external bias potential.