
Five-Transistor Single-Port SRAM Bit Cell with Hight Speed and Low Standby Current
Author(s) -
Changzhou Yu,
Ming-Chuen Shiau,
Ching-Chih Tsai
Publication year - 2018
Publication title -
international journal of vlsi design and communication systems
Language(s) - English
Resource type - Journals
eISSN - 0976-1357
pISSN - 0976-1527
DOI - 10.5121/vlsic.2018.9401
Subject(s) - static random access memory , bit (key) , port (circuit theory) , standby power , transistor , computer science , electrical engineering , computer hardware , engineering , computer network , voltage