
Design of Three Bit Analog-To-Digital Converter (ADC) Using Spatial Wavefunction Switched (SWS) FETS
Author(s) -
Supriya Karmakar
Publication year - 2013
Publication title -
international journal of vlsi design and communication systems
Language(s) - English
Resource type - Journals
eISSN - 0976-1357
pISSN - 0976-1527
DOI - 10.5121/vlsic.2013.4301
Subject(s) - analog to digital converter , bit (key) , physics , successive approximation adc , digital to analog converter , electrical engineering , electronic engineering , computer science , engineering , capacitor , voltage , computer security
The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gapquantum well channels inside the substrate of the semiconductor. Applied voltage at the gate region of theSWSFET, switches the charge carrier concentration in different channels from source to drain region. Theswitching of electron wave function in different channels can be explained by the device model of theSWSFET. A circuit model of SWSFET is developed in BSIM 4.0.0. The design of three bit analog-to-digitalconverter (ADC) using one three wells SWSFET is explained in this work. Analog-to-digital converter(ADC) circuit design using less number of SWSFET will reduce the device count in future analog anddigital circuit design