Open AccessHigh Fin Width Mosfet Using Gaa Structure
Author(s) -
Shweta Tripathi
Publication year - 2012
Publication title -
international journal of vlsi design and communication systems
Language(s) - Uncategorized
Resource type - Journals
eISSN - 0976-1357
pISSN - 0976-1527
DOI - 10.5121/vlsic.2012.3509
Subject(s) - fin , mosfet , environmental science , materials science , engineering , electrical engineering , composite material , voltage , transistor