Open AccessInfluence of Temperature of Ion Implantation on Distribution of Concentration of Dopant in an Implanted-Junction Rectifiers
Author(s) -
Pankratov E.L,
Bulaeva E.A
Publication year - 2016
Publication title -
international journal of applied control, electrical and electronics engineering
Language(s) - English
Resource type - Journals
ISSN - 2394-0816
DOI - 10.5121/ijaceee.2016.4101
Subject(s) - dopant , ion implantation , materials science , optoelectronics , ion , junction temperature , analytical chemistry (journal) , doping , chemistry , thermodynamics , physics , chromatography , thermal , organic chemistry