Open AccessFinFET based 6T SRAM Cell for Nanoscaled Technologies
Author(s) -
Lalit Mohan,
Gurmohan Singh,
M. Kaur
Publication year - 2015
Publication title -
international journal of computer applications
Language(s) - Uncategorized
Resource type - Journals
ISSN - 0975-8887
DOI - 10.5120/ijca2015906573
Subject(s) - static random access memory , cmos , transistor , computer science , noise margin , power–delay product , planar , electronic engineering , chip , dissipation , electrical engineering , voltage , computer hardware , engineering , physics , telecommunications , computer graphics (images) , thermodynamics
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