Open AccessAnalysis of Leakage Current Reduction Techniques in SRAM Cell in 90nm CMOS Technology
Author(s) -
Dinesh ChandGupta,
Ashish Raman
Publication year - 2012
Publication title -
international journal of computer applications
Language(s) - English
Resource type - Journals
ISSN - 0975-8887
DOI - 10.5120/7910-1150
Subject(s) - computer science , cmos , static random access memory , leakage (economics) , reduction (mathematics) , leakage power , electrical engineering , optoelectronics , computer hardware , materials science , transistor , voltage , economics , macroeconomics , engineering , geometry , mathematics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom