Open AccessA Novel Approach to use ZnO Thin Film as a Switching in Dynamic Random Access Memory (DRAM) Cell
Author(s) -
Amit Kumar,
Deepak Chaudhary,
M Suresh Kumar,
Beer Singh
Publication year - 2012
Publication title -
international journal of computer applications
Language(s) - English
Resource type - Journals
ISSN - 0975-8887
DOI - 10.5120/6232-7454
Subject(s) - dram , dynamic random access memory , computer science , random access memory , transistor , memory cell , non volatile memory , optoelectronics , materials science , random access , semiconductor memory , non volatile random access memory , universal memory , memory refresh , computer hardware , electrical engineering , computer memory , computer network , voltage , engineering
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