Open AccessSimulation of the Electrical and Thermal Properties of a Graphene Field Effect Transistor
Author(s) -
K Gopikrishnan,
Rahul Anil Nair
Publication year - 2022
Publication title -
international journal of advanced research in science, communication and technology
Language(s) - English
Resource type - Journals
ISSN - 2581-9429
DOI - 10.48175/ijarsct-2584
Subject(s) - graphene , materials science , thermal , transistor , optoelectronics , field effect transistor , channel (broadcasting) , nanotechnology , electrical engineering , voltage , physics , thermodynamics , engineering
In this paper, the electrical and thermal properties of Graphene field effect transistor (GFET) has been simulated by varying the width of graphene channel. Here, the electrical characteristics, like electron density, hole density, I-V Characteristics and charge carrier velocity profile in the channel region has been studied for three different values of graphene channel width: 1 nm, 2 nm and 5 nm. To analyse the thermal properties of the GFET device, the temperature profile of the graphene channel has been simulated for 100, 300 and 500K. After analysing the simulation of this characteristics, it is concluded that, both electrical and thermal properties of GFET can be improved by fabricating the channel with larger width in the GFET device.