Open AccessFabrication of Cu4SnS4 Thin Films: Α Review
Author(s) -
Ho Soonmin
Publication year - 2020
Publication title -
engineering, technology and applied science research/engineering, technology and applied science research
Language(s) - English
Resource type - Journals
eISSN - 2241-4487
pISSN - 1792-8036
DOI - 10.48084/etasr.3663
Subject(s) - thin film , materials science , orthorhombic crystal system , band gap , crystallite , fabrication , chemical bath deposition , solar cell , ternary operation , deposition (geology) , evaporation , direct and indirect band gaps , layer (electronics) , absorption (acoustics) , analytical chemistry (journal) , chemical engineering , diffraction , nanotechnology , optoelectronics , optics , chemistry , composite material , metallurgy , computer science , organic chemistry , alternative medicine , pathology , engineering , biology , paleontology , thermodynamics , programming language , medicine , physics , sediment
Ternary compounds such as Cu4SnS4 thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu4SnS4 films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu4SnS4 thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu4SnS4 films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.