Fabrication of Cu4SnS4 Thin Films: Α Review | Zendy

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Fabrication of Cu4SnS4 Thin Films: Α Review

Author(s) -

Ho Soonmin

Publication year - 2020

Publication title -

engineering technology and applied science research

Language(s) - English

Resource type - Journals

eISSN - 2241-4487

pISSN - 1792-8036

DOI - 10.48084/etasr.3663

Subject(s) - thin film , orthorhombic crystal system , materials science , band gap , crystallite , chemical bath deposition , fabrication , solar cell , ternary operation , deposition (geology) , evaporation , analytical chemistry (journal) , direct and indirect band gaps , layer (electronics) , chemical engineering , diffraction , nanotechnology , optoelectronics , optics , chemistry , metallurgy , organic chemistry , alternative medicine , pathology , computer science , engineering , biology , paleontology , thermodynamics , programming language , medicine , physics , sediment

Ternary compounds such as Cu4SnS4 thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu4SnS4 films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu4SnS4 thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu4SnS4 films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.

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