Open AccessENHANCEMENT OF SWITCHING TIME AND POWER OF CMOS DEVICES
Author(s) -
Anmol Mohanty,
C.J. Reddy
Publication year - 2013
Publication title -
international journal of power system operation and energy management
Language(s) - English
Resource type - Journals
ISSN - 2231-4407
DOI - 10.47893/ijpsoem.2013.1090
Subject(s) - cmos , inverter , electronic engineering , power (physics) , computer science , electrical engineering , power semiconductor device , engineering , voltage , physics , quantum mechanics
Mosfets have been used widely in electronic devices as the basic building blocks of processors, controllers, and Switches etc. But perhaps the simplest and the most common Among such a myriad of applications is the cmos inverter with It’s powerful switching characteristics. We make an attempt to Present ways to further improve the switching characteristics and The transition region of the cmos inverter without any Significant trade-off losses. This indirectly leads to a mos which Operates at a lower power as will be shown. The tradeoffs, which Do not degrade the device significantly, have beenpresented too. The latest techniques for achieving them have been discussed as Well.