Open AccessPERFORMANCE COMPARISON OF BULK FINFET WITH SOI FINFET IN NANO-SCALE REGIME
Author(s) -
Sumanlata Tripathi,
R. A. Mishra,
Sandeep Kumar Mishra,
Virendra Pratap Yadav,
R. A. Mishra
Publication year - 2013
Publication title -
international journal of electronic signal and systems
Language(s) - English
Resource type - Journals
ISSN - 2231-5969
DOI - 10.47893/ijess.2013.1148
Subject(s) - silicon on insulator , subthreshold conduction , subthreshold slope , mosfet , materials science , threshold voltage , scaling , optoelectronics , doping , short channel effect , electronic engineering , voltage , electrical engineering , transistor , engineering , silicon , mathematics , geometry
This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also compares the performance improvement of Multi-gate Bulk and SOI MOSFET over Single-gate bulk and SOI MOSFET.The simulation results are obtained with the help of TCAD 3-D device simulator are well matched with the ideal characteristics.