Open AccessHigh-performance Ni/Yb2O3/TaN Programmable Memory Cell for Nonvolatile Memory Applications
Author(s) -
Somnath Mondal,
FaHsyang Chen,
Tung-Ming Pan
Publication year - 2012
Publication title -
international journal of electronics and electical engineering
Language(s) - Uncategorized
Resource type - Journals
ISSN - 2231-5284
DOI - 10.47893/ijeee.2012.1015
Subject(s) - materials science , non volatile memory , resistive random access memory , optoelectronics , high resistance , data retention , oxide , memory cell , oxygen , nanotechnology , electrical engineering , transistor , chemistry , metallurgy , voltage , engineering , agronomy , organic chemistry , biology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom