Open AccessFABRICATION OF AG SB (SXSE1-X)2 /SI HETEROJUNCTION FOR SOLAR CELL APPLICATION
Author(s) -
Hiba H. Issa
Publication year - 2020
Publication title -
minar international journal of applied sciences and technology
Language(s) - English
Resource type - Journals
ISSN - 2717-8234
DOI - 10.47832/2717-8234.4-2.5
Subject(s) - heterojunction , materials science , crystallite , solar cell , thin film , substrate (aquarium) , sulfur , analytical chemistry (journal) , optoelectronics , nanotechnology , metallurgy , chemistry , oceanography , chromatography , geology
The preparation of the AgSb (SxSe1-x)2 was done by the quenching method. It is a quaternary substance with sulfur. Preparation of AgSb (SxSe1-x)2 thin films with sulfur was done on the glass substrate at room temperature 303K with a pressure vacuum of (0.01) bar by using a technique called pulsed laser deposition at thickness (~100 nanometres). The structural properties of alloys thin films are tested by x-ray diffraction analysis. Our findings showed that all compounds have polycrystalline structure with cubic phase due to the deposition of the AgSb (SxSe1-x)2. The atomic force microscopy is used for showing mean size, wherever mean size decreases, and the roughness becomes more irregularity with the increase of sulphur level in the alloys. The electrical measurements of AgSb (SxSe1-x)2 /p-Si and AgSb (SxSe1-x)2/n-Si heterojunctions which is included I-V properties cell area structures of(0.61) cm2 were measured. The AgSb (SxSe1-x)2/n-Si showed the best results with a maximum open voltage Voc of these heterojunctions with Sulfur level x= 0.4). It was most suitable for solar cell high efficiency (η = 0.07%) at x= 0.4 on n-Si substrate.