Open AccessEFFECT OF MOLARCONCENTRATION OF PRECURSORSON THE STRUCTURAL, OPTICALAND ELECTRICAL PROPERTIES OF CUALS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION TECHNIQUE
Author(s) -
Bilal Y. Taher,
Ahmad S. Ahmad
Publication year - 2021
Publication title -
minar international journal of applied sciences and technology
Language(s) - English
Resource type - Journals
ISSN - 2717-8234
DOI - 10.47832/2717-8234.3-3.12
Subject(s) - thin film , materials science , analytical chemistry (journal) , amorphous solid , chemical bath deposition , substrate (aquarium) , surface roughness , scanning electron microscope , electrical resistivity and conductivity , nanotechnology , chemistry , composite material , crystallography , chromatography , oceanography , engineering , geology , electrical engineering
CuAlS2 thin films have been prepared on glass substrates by Chemical bath deposition (CBD) technique at a substrate temperature (Ts) 75C, pH value 10.5.The Effect of three different molar concentration (0.05, 0.025, 0.1), (0.075, 0.0375, 0.15), and (0.1, 0.05, 0.2) M of precursors of (CuSO4.5H2O, Al2(SO4)3.16H2O, and (NH2)2CS), respectively on the structural, optical and electrical properties of deposit thin films was studied. The X-ray diffraction (XRD) patterns showed that the films have an amorphous structure with simple enhancement in the structure of the films with the higher molar concentration. Field emission scanning electron microscopy (FESEM) analysis of thin films showed that the deposited films were a good surface morphology, homogenous and uniform spherical nanoparticles over the substrate surface with very little agglomerated particles with average grain size in the range (45 to 72 nm) increase with increasing molar concentration of precursors. Atomic force microscopy (AFM) showed the topography of deposited films has nanoparticles with structures like conical and lobes shape, with the average grain sizes, root mean square (rms) roughness, and surface roughness increase with increasing molar concentration of precursors. The optical analysis by UV-Vis Spectrophotometer showed high absorption in the ultraviolet region, with absorption edge and direct energy gaps (3.5 to 4eV) variedat different molar concentrations of precursors. The electrical results from Hall effect measurements showed that the values of resistivity, conductivity, mobility, and carrier concentration were varied in range (0.046 to 0.594ohm.cm), (1.86 to 21.7(ohm.cm)-1), (301to 1510 cm2/V.S), and (3.29×1016 to 1.46×1017 cm-3), respectively .Also,n-type conductivity was investigated for all prepared film sat different molar concentration of precursors. The obtained results of the prepared CuAlS2 thin films can be suitable in many optoelectronics applications.