On the Possibility of a Significant Increase in Semiconductors Photosensitivity Spatial Profiling Flux of Radiation.

Theory-based, three new unknown photoelectric effects can be occurred in semiconductors under inhomogeneous optical illumination with specific profile shapes along electric field in semiconductor: self-amplification, self-quenching and sign self-inversion of photogeneration rate of mobile charge carriers. The general shapes of corresponding illumination profiles are calculated. The occurring effects cause by local photoexcited space charge (PSC). It is shown that profile shapes depend on parameters of semiconductor, dark electric field strength and temperature. Also, we determine general shapes of “neutral” profiles when local PSC although exists but does not affect the result of interaction of optical radiation with a semiconductor. In other words, calculations with such “neutral” profiles lead to the same result as with using quasi-neutrality approximation, which does not account PSC. The shape of “neutral” profile depends only on dark electric field strength, temperature and sample size along the electric field. Embodiments for all types of profiles are given. The results can be used in practice, first, to increasing significantly photoelectric response of semiconductor detectors of optical radiation.