
TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT
Author(s) -
Predusca Gabriel
Publication year - 2022
Publication title -
journal of science and arts
Language(s) - English
Resource type - Journals
eISSN - 2068-3049
pISSN - 1844-9581
DOI - 10.46939/j.sci.arts-22.2-c01
Subject(s) - heterojunction bipolar transistor , bipolar junction transistor , heterostructure emitter bipolar transistor , optoelectronics , materials science , transistor , heterojunction , doping , electrical engineering , engineering , voltage