Open AccessEFFECT OF DEFECTS ORIGINATING UNDER THE PROTON IRRADIATION ON THE ELECTROPHYSICAL AND DETECTOR PROPERTIES OF CdTe:Cl AND CdZnTe
Author(s) -
А. И. Кондрик
Publication year - 2021
Publication title -
problems of atomic science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.216
H-Index - 17
eISSN - 1562-6016
pISSN - 1682-9344
DOI - 10.46813/2021-132-043
Subject(s) - cadmium telluride photovoltaics , irradiation , detector , materials science , ionizing radiation , proton , radiation , charge carrier , electrical resistivity and conductivity , semiconductor , radiation damage , semiconductor detector , electron , particle detector , atomic physics , optoelectronics , radiochemistry , physics , optics , nuclear physics , chemistry , quantum mechanics
The work is dedicated to studying by computer modeling the mechanisms of the influence of radiation defects, originating under high energy proton irradiation, on the resistivity ρ, lifetime of nonequilibrium electrons n and holes p in CdTe:Cl and Cd0.9Zn0.1Te, and charge collection efficiency η of room temperature ionizing radiation detectors based on these materials. The effect of recombination at deep levels of radiation defects on the degradation of n, p, and of detectors based on CdTe:Cl and Cd0.9Zn0.1Te was studied. Energy levels of radiation defects also substantially effect on compensation degree of semiconductor decreasing ρ. The main factors affecting the abrupt or gradual decrease in the resistivity and charge collection efficiency of these detectors during their bombardment by high-energy protons, leading to complete degradation of their recording ability, were found. The important role of purity and deep donor concentration in initial state of the detector material was indicated.