Open AccessMODELING THE RESPONSE OF A PLANAR SILICON DETECTOR WHEN MEASURING THE EXPOSURE DOSE RATE IN THE ENERGY RANGE FROM 5keV TO 10MeV
Author(s) -
V. Dubina,
Н.И. Маслов,
I.N. Shlyahov
Publication year - 2020
Publication title -
problems of atomic science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.216
H-Index - 17
eISSN - 1562-6016
pISSN - 1682-9344
DOI - 10.46813/2020-129-105
Subject(s) - detector , range (aeronautics) , dosimeter , dosimetry , planar , physics , silicon , energy (signal processing) , radiation , absorbed dose , optics , semiconductor detector , optoelectronics , computational physics , nuclear medicine , materials science , computer science , computer graphics (images) , medicine , quantum mechanics , composite material
The main advantages of using silicon semiconductor detectors in dosimetry in comparison with traditional detectors are considered. The shortcomings are analyzed and possible methods for their elimination are proposed. One of the proposed methods makes it possible to increase the eciency of detecting gamma quantum in the energy range 0.1...10MeV . The requirements are formulated to optimize the design of detectors operating in a wide range of dose rates and gamma radiation energies by computer simulation. Mathematical calculations and computer simulations determine the dosimeter design, materials and thicknesses γ-converter. The mechanisms of modeling the absorbed dose in air and ambient dose in silicon detectors with a thickness of 300µm, sizes (5×5)mm2 and (1.8×1.8)mm2, in the range of incident γ-ray energies from 5keV to 10MeV are presented.