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GAMMA-RADIATION SPECTRA OF 1200 MeV ELECTRONS IN THICK BERYLLIUM, SILICON AND TUNGSTEN SINGLE CRYSTALS
Author(s) -
G.L. Bochek,
O.S. Deiev,
V.I. Kulibaba,
Н.И. Маслов,
V.D. Ovchinnik,
S.M. Potin,
B. I. Schramenko
Publication year - 2019
Publication title -
problems of atomic science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.216
H-Index - 17
eISSN - 1562-6016
pISSN - 1682-9344
DOI - 10.46813/2019-121-086
Subject(s) - tungsten , beryllium , silicon , materials science , spectral line , radiation , electron , atomic physics , single crystal , crystallography , optics , physics , chemistry , nuclear physics , optoelectronics , astronomy , metallurgy
Gamma radiation spectra of 1200 MeV electrons from the single crystals of the beryllium 1.2 mm thick, silicon 1.5 mm and 15 mm thick and tungsten 1.18 mm thick along of the crystallographic axes were measured. Also spectral-angular distributions of gamma radiation from the silicon single crystals 1.5 mm thick along of the crystallographic axes , and were measured. On the basis of these measurements the γ-radiation spectra for the different solid angles up to 6.97 × 10−6 sr were obtained.

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