Open AccessInterface Trap Effects on the Output Characteristics of GaN Schottky Barrier MOSFET
Author(s) -
Byeong-Jun Park,
Hansol Kim,
SungHo Hahm
Publication year - 2022
Publication title -
senseo haghoeji
Language(s) - English
Resource type - Journals
eISSN - 2093-7563
pISSN - 1225-5475
DOI - 10.46670/jsst.2022.31.4.271
Subject(s) - schottky barrier , mosfet , materials science , optoelectronics , interface (matter) , trap (plumbing) , electrical engineering , physics , engineering , transistor , voltage , composite material , diode , capillary number , capillary action , meteorology